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Part Name(s) : 3SK199
Toshiba
Toshiba
Description : TOSHIBA Field Effect Transistor Silicon N Channel DUAL GATE MOS Type

TOSHIBA Field Effect Transistor Silicon N Channel DUAL GATE MOS Type

TV TUNER, UHF RF AMPLIFIER APPLICATIONS

Part Name(s) : 2SK208
Twtysemi
TY Semiconductor
Description : Silicon N Channel Junction Type Field Effect Transistor

Silicon N Channel Junction Type Field Effect Transistor

MICROPHONE APPLICATIONS

Part Name(s) : 3SK153
Toshiba
Toshiba
Description : TOSHIBA Field Effect Transistor Silicon N Channel DUAL GATE MOS Type

TOSHIBA Field Effect Transistor Silicon N Channel DUAL GATE MOS Type

TV TUNER, UHF RF AMPLIFIER APPLICATIONS
TV TUNER VHF WIDE BAND RF AMPLIFIER APPLICATIONS

SANYO
SANYO -> Panasonic
Description : Silicon N-Channel Junction-Type Field Effect Transistor FOR CONDENSER MICROPHONE IMPEDANCE CONVERSION

Silicon N-Channel Junction-Type Field Effect Transistor FOR CONDENSER MICROPHONE IMPEDANCE CONVERSION

Part Name(s) : 3SK259
Toshiba
Toshiba
Description : TOSHIBA Field Effect Transistor Silicon N Channel DUAL GATE MOS Type

TOSHIBA Field Effect Transistor Silicon N Channel DUAL GATE MOS Type

TV TUNER, UHF RF AMPLIFIER APPLICATIONS
TV TUNER VHF WIDE BAND RF AMPLIFIER APPLICATIONS

Part Name(s) : 3SK283
Toshiba
Toshiba
Description : TOSHIBA Field Effect Transistor GaAs N-Channel DUAL GATE MES Type

TOSHIBA Field Effect Transistor GaAs N-Channel DUAL GATE MES Type

TV TUNER, UHF RF AMPLIFIER APPLICATIONS

Description : Field Effect Transistor Silicon N Channel Junction Type

Field Effect Transistor   Silicon N Channel Junction Type
FM Tuner Applications
VHF Band Amplifier Applications

 Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz)
 High forward transfer admittance: |Yfs| = 9 mS (typ.)
 Extremely low reverse transfer capacitance: Crss= 0.1 pF (typ.)

 

Toshiba
Toshiba
Description : Field Effect Transistor Silicon P Channel Junction Type

Field Effect Transistor  Silicon P Channel Junction Type
Low Noise Audio Amplifier Applications

•  Recommended for first stages of EQ amplifiers and MC head amplifiers.
•  High |Yfs|: |Yfs| = 22 mS (typ.)
                 (VDS= −10 V, VGS= 0, IDSS= −3 mA)
•  Low noise: En = 0.95 nV/Hz1/2(typ.)
                  (VDS= −10 V, ID= −1 mA, f = 1 kHz)
•  High input impedance: IGSS= 1.0 nA (max) (VGS= 25 V)
•  Complementary to 2SK370
•  Small package

Part Name(s) : 2SK1348 K1348
Toshiba
Toshiba
Description : Field Effect Transistor Silicon N Channel MOS Type(L2-π-MOS III)

Field Effect Transistor Silicon N Channel MOS Type(L2-π-MOS III)

High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications

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Part Name(s) : 2N6550
InterFET
InterFET
Description : N-Channel Silicon Junction Field-Effect Transistor

N-Channel Silicon Junction Field-Effect Transistor

Low-Noise, High Gain Amplifier

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