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Silicon Hot-Carrier Diodes Schottky Barrier Diodes

These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low–cost, high–volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package.

• The Schottky Barrier Construction Provides Ultra–Stable Characteristics by Eliminating the “Cat–Whisker” or “S–Bend” Contact
• Extremely Low Minority Carrier Lifetime – 15 ps (Typ)
• Very Low Capacitance – 1.0 pF @ VR = 20 V
• High Reverse Voltage – to 70 Volts
• Low Reverse Leakage – 200 nA (Max)

30 Volt Silicon Hot-Carrier Detector
Surface Mount Schottky Barrier Diode

FEATURES
● Low Turn-on Voltage
● Extremely Fast Switching Speed
● PN Junction Guard Ring for Transient and
   ESD Protection

Silicon Hot-Carrier Diodes Schottky Barrier Diode

These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low–cost, high–volume consumer and industrial/commercial requirements. They are available in a Surface Mount package.

• Extremely Low Minority Carrier Lifetime – 15 ps (Typ)
• Very Low Capacitance – 1.5 pF (Max) @ VR = 15 V
• Low Reverse Leakage – IR = 13 nAdc (Typ)
• Device Marking: 4T

These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low–cost, high–volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package.
   
• The Schottky Barrier Construction Provides Ultra–Stable Characteristics by Eliminating the “Cat–Whisker” or “S–Bend” Contact
• Extremely Low Minority Carrier Lifetime – 15 ps (Typ)
• Very Low Capacitance – 1.5 pF (Max) @ VR = 15 V
• Low Reverse Leakage – IR = 13 nAdc (Typ) MBD301, MMBD301
   

Silicon Hot –Carrier Diodes

These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low–cost,high–volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package.

• Extremely Low Minority Carrier Lifetime – 15 ps (Typ)
• Very Low Capacitance – 1.0 pF @ V R = 20 V
• High Reverse Voltage – to 70 Volts
• Low Reverse Leakage – 200 nA (Max)

These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low–cost, high–volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package.

• Extremely Low Minority Carrier Lifetime – 15 ps (Typ)
• Very Low Capacitance – 1.5 pF (Max) @ VR = 15 V
• Low Reverse Leakage – IR = 13 nAdc (Typ) MBD301, MMBD301

These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low–cost, high–volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package.

• Extremely Low Minority Carrier Lifetime – 15 ps (Typ)
• Very Low Capacitance – 1.0 pF @ VR = 20 V
• High Reverse Voltage – to 70 Volts
• Low Reverse Leakage – 200 nA (Max)

These devices are designed primarily for high–efficiency UHF and VHF detector applications.They are readily adaptable to many other fast switching RF and digital applications.They are supplied in an inexpensive plastic package for low–cost, high–volume consumer and industrial/commercial requirements.They are also available in a Surface Mount package.

• EXtremely Low Minority Carrier Lifetime –15ps(Typ)
• very Low Capacitance –1.5pF(Max)@VR=15V
• CLow Reverse Leakage –IR=13 nAdc(Typ)MBD301,MMBD301

These devices are designed primarily for high–efficiency UHF and VHF detector applications.They are readily adaptable to many other fast switching RF and digital applications.They are supplied in an inexpensive plastic package for low–cost, high–volume consumer and industrial/commercial requirements.They are also available in a Surface Mount package.
   
• EXtremely Low Minority Carrier Lifetime –15ps(Typ)
• very Low Capacitance –1.5pF(Max)@VR=15V
• CLow Reverse Leakage –IR=13 nAdc(Typ)MBD301,MMBD301
   

These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low−cost, high−volume consumer and  industrial/commercial requirements. They are also available in a Surface Mount package.

Features
• Extremely Low Minority Carrier Lifetime − 15 ps (Typ)
• Very Low Capacitance − 1.5 pF (Max) @ VR= 15 V
• Low Reverse Leakage − IR= 13 nAdc (Typ) MBD301, MMBD301
• Pb−Free Packages are Available