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Part Name(s) : BF245B BF245C BF245A
NJSEMI
New Jersey Semiconductor
Description : N-CHANNEL Silicon JUNCTION FIELD-EFFECT TRANSISTORS

N-CHANNEL Silicon JUNCTION FIELD-EFFECT TRANSISTORS

BF 245 A, B and C are N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS in plastic package similar to TO 92 (10 A 3 DIN 41868). They are particularly suitable for use in dc, AF and RF amplifiers.

Description : N-CHANNEL Silicon JUNCTION FIELD-EFFECT TRANSISTORS

N-CHANNEL Silicon JUNCTION FIELD-EFFECT TRANSISTORS

BF 245 A, B and C are N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS in plastic package similar to TO 92 (10 A 3 DIN 41868). They are particularly suitable for use in dc, AF and RF amplifiers.

Description : PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS (N-CHANNEL JFETs)

N-CHANNEL JFETs

Part Name(s) : 2N3456
NJSEMI
New Jersey Semiconductor
Description : N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS

N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS

Part Name(s) : 2N5912 2N5911
NJSEMI
New Jersey Semiconductor
Description : DIFFETENTIAL PAIRS N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS

DIFFETENTIAL PAIRS N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS

Description : Low-Noise N-CHANNEL JUNCTION FIELD-EFFECT Transistor for RF Applications

Low-Noise N-CHANNEL JUNCTION FIELD-EFFECT Transistor for RF Applications

BF 410 A, B, C, and D are asymmetric epitaxial planar N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS in plastic package similar to TO92 (10 A 3 DIN 41888). They are designed for use up to the VHF range.

Part Name(s) : J111 J112 J113
Micro-Electronics
Micro Electronics
Description : N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS

J111, J112, J113 are N-CHANNEL silicon JUNCTION field effect TRANSISTORS designed for analog switching, choppers and commutators applications.

Philips
Philips Electronics
Description : N-CHANNEL silicon JUNCTION FIELD-EFFECT TRANSISTORS

DESCRIPTION
General purpose N-CHANNEL symmetrical silicon JUNCTION FIELD-EFFECT TRANSISTORS in a plastic TO-92 variant package.

FEATURES
• Interchangeability of drain and source connections
• High IDSSrange
• Frequency up to 450 MHz.

APPLICATIONS
• VHF and UHF amplifiers
• Mixers
• General purpose switching.

Part Name(s) : BF556A BF556B BF556C
Philips
Philips Electronics
Description : N-CHANNEL silicon JUNCTION FIELD-EFFECT TRANSISTORS

DESCRIPTION
N-CHANNEL symmetrical silicon JUNCTION FIELD-EFFECT TRANSISTORS in a SOT23 package.

FEATURES
• Low leakage level (typ. 500 fA)
• High gain
• Low cut-off voltage.

APPLICATIONS
• Impedance converters in e.g. electret microphones and
    infra-red detectors
• VHF amplifiers in oscillators and mixers.

Part Name(s) : 2N3823
Micro-Electronics
Micro Electronics
Description : N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR

N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR

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