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Part Name(s) : UPA1981 UPA1981TE
NEC
NEC => Renesas Technology
Description : N-CHANNEL/P-Channel MOS FET PAIR FOR LOAD Switch

DESCRIPTION
The µ PA1981 is a N-Channel/P-Channel MOS FET pair for compact power management in portable electronic equipment where 2.5 to 8 V input and 2.8 A output current capability are needed.
This load Switch integrated a small N-Channel MOS FET (Q1), which drives a large P-Channel MOS FET (Q2) in one tiny package (SC-95).

FEATURES
• VS2D21 = 0.2 V MAX. (VS2S1 = 5.0 V, ID2 = −2.8 A, RD2S2(on)1 = 70 mΩ)
• VS2D22 = 0.2 V MAX. (VS2S1 = 2.5 V, ID2 = −1.9 A, RD2S2(on)2 = 105 mΩ)

Part Name(s) : J270
Fairchild
Fairchild Semiconductor
Description : P-Channel Switch

P-Channel Switch

• This device is designed for low level analog Switching sample and hold
   circuits and chopper stabilized amplifiers.
• Sourced from process 88.

Part Name(s) : LS5018_SOT-23
MICROSS
Micross Components
Description : single P-Channel JFET Switch

This P-Channel analog Switch is designed to provide low on-resistance and fast Switching.
The SOT-23 package provides ease of manufacturing, and a lower cost assembly option.

FEATURES
  DIRECT REPLACEMENT FOR SILICONIX 2N5018
  ZERO OFFSET VOLTAGE
  LOW ON RESISTANCE rDS(on) ≤ 75Ω

LS5018 Benefits:
▪ Low Insertion Loss
▪ No offset or error voltage generated by closed Switch
▪ Purely resistive

LS5018 Applications:
▪ Analog Switches
▪ Commutators
▪ Choppers

 

Part Name(s) : LS5018
MICROSS
Micross Components
Description : single P-Channel JFET Switch

This P-Channel analog Switch is designed to provide low on-resistance and fast Switching.
The hermetically sealed TO-18 package is well suited for hi-reliability and harsh environment applications.

FEATURES
  DIRECT REPLACEMENT FOR SILICONIX 2N5018
  ZERO OFFSET VOLTAGE
  LOW ON RESISTANCE rDS(on) ≤ 75Ω
ABSOLUTE MAXIMUM RATINGS
   @ 25°C (unless otherwise noted)
  
LS5018 Benefits:
▪ Low Insertion Loss
▪ No offset or error voltage generated by closed Switch
▪ Purely resistive

LS5018 Applications:
▪ Analog Switches
▪ Commutators
▪ Choppers

 

Part Name(s) : LS5018_TO-18
MICROSS
Micross Components
Description : single P-Channel JFET Switch

This P-Channel analog Switch is designed to provide low on-resistance and fast Switching.
The hermetically sealed TO-18 package is well suited for hi-reliability and harsh environment applications.

FEATURES
  DIRECT REPLACEMENT FOR SILICONIX 2N5018
  ZERO OFFSET VOLTAGE
  LOW ON RESISTANCE rDS(on) ≤ 75Ω

LS5018 Benefits:
▪ Low Insertion Loss
▪ No offset or error voltage generated by closed Switch
▪ Purely resistive

LS5018 Applications:
▪ Analog Switches
▪ Commutators
▪ Choppers

 

Part Name(s) : FDC6332L
Fairchild
Fairchild Semiconductor
Description : Common Source Load Switch P-Channel 1.8V Specified PowerTrench® MOSFET

General Description
This Load Switch integrates an N-Channel Power MOSFET that drives Common-Source P-Channels and in a small SuperSotTM–6 package. It uses Fairchild’s advanced low voltage PowerTrench process. The RDS(ON) is 750 mΩ per the Switch @ VGS 1.8Vand is optimized for battery power management applications.

Features
• –1 A, 8 V. RDS(ON) = 350 mΩ @ VGS = –4.5 V RDS(ON) = 500 mΩ @ VGS = –2.5 V RDS(ON) = 750 mΩ @ VGS = –1.8 V
• N-Channel MOSFET includes Zener protection for ESD ruggedness (>6KV Human body model)
• High performance trench technology for extremely low RDS(ON)

Applications
• Battery management/Charger Application
• Accessory load Switching

Part Name(s) : MMBFJ270 MMBFJ270
Fairchild
Fairchild Semiconductor
Description : P-Channel Switch

P-Channel Switch

• This device is designed for low level analog Switching sample and hold circuits and chopper stabilized amplifiers.
• Sourced from process 88.

Part Name(s) : FDR8521L
Fairchild
Fairchild Semiconductor
Description : P-Channel MOSFET With Gate Driver For Load Switch Application

General Description
This device is designed for configuration as a load Switch and is particularly suited for power management in portable battery powered electronic equipment. Designed to operate from 3V to 20V input and supply up to 2.9A, the device features a small N-Channel MOSFET (Q1) together with a large P-Channel Power MOSFET (Q2) in a single SO-8 package.

Features
• VDROP = 0.07 V @ VIN = 12 V, IL = 1 A.R(ON) = 0.07 Ω VDROP = 0.115 V @ VIN = 5 V, IL = 1 A.R(ON) = 0.115 Ω.
• VDROP = 0.2 V @ VIN = 12 V, IL =2.9 A.R(ON) = 0.07 Ω VDROP = 0.2 V @ VIN = 5 V,IL = 1.8 A.R(ON) = 0.115 Ω.
• Control MOSFET (Q1) includes Zener protection for ESD ruggedness (>6kV Human Body Model).
• High density cell design for extremely low on-resistance.

Applications
• Power management
• Load Switch

Part Name(s) : FDR8321L
Fairchild
Fairchild Semiconductor
Description : P-Channel MOSFET With Gate Driver For Load Switch Application

General Description
This device is designed for configuration as a load Switch and is particularly suited for Power Management in portable battery powered electronic equipment. Designed to operate from 2.5V to 8V input and supply up to 2.9A. The device features a small N-Channel MOSFET (Q1) together with a large P-Channel power MOSFET (Q2) in a single SuperSOTTM-8 package.

Features
■ VDROP = 0.2V @ VIN= 5V, IL= 2.9A. RDS(ON) = 0.070 Ω VDROP = 0.2V @ VIN= 2.5V, IL= 2A. RDS(ON) = 0.105 Ω.
■ VON/OFF Zener protection for ESD ruggedness (>6KV Human Body Model).
■ High density cell design for extremely low on-resistance.

Description : N-CHANNEL/P-Channel MOS FET PAIR FOR LOAD Switch

DESCRIPTION
The µ PA1981 is a N-Channel/P-Channel MOS FET pair for compact power management in portable electronic equipment where 2.5 to 8 V input and 2.8 A output current capability are needed.
This load Switch integrated a small N-Channel MOS FET (Q1), which drives a large P-Channel MOS FET (Q2) in one tiny package (SC-95).

FEATURES
• VS2D21 = 0.2 V MAX. (VS2S1 = 5.0 V, ID2 = −2.8 A, RD2S2(on)1 = 70 mΩ)
• VS2D22 = 0.2 V MAX. (VS2S1 = 2.5 V, ID2 = −1.9 A, RD2S2(on)2 = 105 mΩ)

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