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Part Name(s) : J109
Toshiba
Toshiba
Description : P CHANNEL MOS TYPE (HIGH SPEED SWITCHING/ ANALOG SWITCH/ INTERFACE APPLICATIONS)

P CHANNEL Juction TYPE FET 2SJ109 Pinouts

Part Name(s) : 2SK681 2SK681A
NEC
NEC => Renesas Technology
Description : N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

The 2SK681A, N-CHANNEL vertical TYPE MOS FET, is a switching device which can be driven directly by the output of ICs having a 5 V power source.
The MOS FET has excellent switching characteristic and is suitable for use as a HIGH-SPEED switching device in digital circuits.

Part Name(s) : CPH6413
SANYO
SANYO -> Panasonic
Description : N-CHANNEL MOS-TYPE silicon field-effect transistor For ultra-HIGH-SPEED switching

N-CHANNEL MOS-TYPE silicon field-effect transistor For ultra-HIGH-SPEED switching

Features
• Low on-resistance.
• And ultra-HIGH-SPEED switching.
• 2.5V drive.

Part Name(s) : 2SJ334 J334
Toshiba
Toshiba
Description : P CHANNEL MOS TYPE (HIGH SPEED/ HIGH CURRENT SWITCHING/ DC-DC CONVERTER/ RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)

*  TOSHIBA Field Effect Transistor   Silicon P CHANNEL MOS TYPE

* DC−DC Converter, Relay Drive and Motor Drive APPLICATIONS

 

Part Name(s) : 3SK1132 3SK1132-T
NEC
NEC => Renesas Technology
Description : N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

The 3SK1132, N-CHANNEL vertical TYPE MOS FET, is a switching device which can be driven directly by the output of ICs having a 5 V power source.
The MOS FET has excellent switching characteristics and is suitable for use as a HIGH-SPEED switching device in digital circuits.

FEATURES
● Directly driven by ICs having a 5 V power source.
● Not necessary to consider driving current because of its HIGH input impedance.
● Possible to reduce the number of parts by omitting the bias resistor.
● Can be replaced with any resistor self-contained TYPE transistor.
● Can be used complementarily with the 2SJ165.

Part Name(s) : J180
NEC
NEC => Renesas Technology
Description : P-CHANNEL MOS FET / HIGH-SPEED SWITCHING

The 2SJ180, P-CHANNEL vertical TYPE MOS FET, is a switching device which can be driven directly by the output of ICs having a 5V power source.

 

As the MOS FET has low on-state resistance and excellent switching characteristtics, it is suitable for driving actuators such as motors, relays, and solenoids.

 

Part Name(s) : 2SJ358 2SJ358-T2
NEC
NEC => Renesas Technology
Description : P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH

P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH

The 2SJ358 is a P-CHANNEL vertical MOS FET that can be used as a switching element. The 2SJ358 can be directly driven by an IC operating at 5 V.
The 2SJ358 features a low on-resistance and excellent switching characteristics, and is suitable for APPLICATIONS such as actuator driver and DC/DC converter.

FEATURES
• New-TYPE compact package
  Has advantages of packages for small signals and for power transistors, and compensates those disadvantages
• Can be directly driven by an IC operating at 5 V.
• Low on-resistance
    RDS(ON) = 0.40 ΩMAX. @VGS= –4 V, ID= –1.5 A
    RDS(ON) = 0.30 ΩMAX. @VGS= –10 V, ID= –1.5 A

Part Name(s) : K1274
NEC
NEC => Renesas Technology
Description : N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

Part Name(s) : 2SK2842 K2842
Toshiba
Toshiba
Description : N CHANNEL MOS TYPE (HIGH SPEED/ HIGH CURRENT SWITCHING/ CHOPPER REGULATOR/ DC-DC CONVERTERAND MOTOR DRIVE APPLICATIONS)

K2842, 2SK2842 Datasheet

HIGH SPEED, HIGH Current Switching APPLICATIONS

Chopper Regulator, DC-DC Converter and Motor Drive APPLICATIONS.

Part Name(s) : 2SK296 K296
Hitachi
Hitachi -> Renesas Electronics
Description : SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING

SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING

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