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Philips
Philips Electronics
Description : N-channel junction FETs

DESCRIPTION
Symmetrical N-channel junction FETs in a SOT23 envelope. Intended for use in applications such as analog switches, choppers and commutators and in audio amplifiers.

FEATURES
• High-speed switching
• Interchangeability of drain and source connections
• Low RDSon at zero gate voltage (<8Ω for PMBFJ108).

Philips
Philips Electronics
Description : N-channel junction FETs

DESCRIPTION
Symmetrical N-channel junction FETs in a surface mount SOT23 envelope. Intended for use in applications such as analog switches, choppers, commutators, multiplexers and thin and thick film hybrids.

FEATURES
• High-speed switching
• Interchangeability of drain and source connections
• Low RDSon at zero gate voltage ( < 30 Ω for PMBFJ111).

Part Name(s) : J108 J109 J110
Philips
Philips Electronics
Description : N-channel silicon junction FETs

DESCRIPTION
N-channel symmetrical silicon junction field-effect transistors in a TO-92 package.

FEATURES
• High speed switching
• Interchangeability of drain and source connections
• Low RDSon at zero gate voltage (<8 Ω for J108).

APPLICATIONS
• Analog switches
• Choppers and commutators.

NXP
NXP Semiconductors.
Description : N-channel junction FETs

General description
Symmetrical N-channel junction FETs in a SOT23 package.

Features and benefits
■ High-speed switching
■ Interchangeability of drain and source connections
■ Low RDSon at zero gate voltage (< 30 Ω for PMBFJ111).

Applications
■ Analog switches
■ Choppers
■ Commutators
■ Multiplexers
■ Thin and thick film hybrids.

NXP
NXP Semiconductors.
Description : N-channel junction FETs

General description
Symmetrical N-channel junction FETs in a SOT23 package.

Features and benefits
■ High-speed switching
■ Interchangeability of drain and source connections
■ Low RDSon at zero gate voltage (< 8 Ω for PMBFJ108).

Applications
■ Analog switches
■ Choppers and commutators
■ Audio amplifiers.

Part Name(s) : BF245B BF245C BF245A
NJSEMI
New Jersey Semiconductor
Description : N-channel silicon junction Field-Effect Transistors

N-channel silicon junction Field-Effect Transistors

BF 245 A, B and C are N-channel junction field-effect transistors in plastic package similar to TO 92 (10 A 3 DIN 41868). They are particularly suitable for use in dc, AF and RF amplifiers.

Philips
Philips Electronics
Description : N-channel junction FETs

DESCRIPTION
N-channel symmetrical junction field effect transistors in a SOT23 package.

FEATURES
• High transfer admittance
• Low input capacitance
• Low feedback capacitance
• Low noise.

APPLICATIONS
• Preamplifiers for AM tuners in car radios.

Part Name(s) : 2SK121
Sony
Sony Semiconductor
Description : silicon N-channel junction FET

silicon N-channel junction FET

Part Name(s) : BFW12 BFW13
NJSEMI
New Jersey Semiconductor
Description : N-channel silicon FETs

N-channel silicon FETs


Part Name(s) : VN10KN9
Supertex
Supertex Inc
Description : N-channel Enhancement-Mode Vertical DMOS FETs

N-channel Enhancement-Mode Vertical DMOS FETs

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