N-channel Silicon Junction field-effect transistors
BF 245 A, B and C are N-channel junction field-effect transistors in plastic package similar to TO 92 (10 A 3 DIN 41868). They are particularly suitable for use in dc, AF and RF amplifiers.
N-channel SILICON JUNCTION field-effect transistors
DIFFETENTIAL PAIRS N-channel SILICON JUNCTION field-effect transistors
MOS FIELD EFFECT transistors
DUAL MOS FIELD EFFECT transistors WITH CHANNEL P
JUNCTION FIELD EFFECT transistors WITH CHANNEL N FOR VERY HIGH SPEED CIRCUITS AND CHOPPERS
J111, J112, J113 are N-channel silicon junction field effect transistors designed for analog switching, choppers and commutators applications.
Low-Noise N-channel Junction field-effect Transistor for RF Applications
BF 410 A, B, C, and D are asymmetric epitaxial planar N-channel junction field-effect transistors in plastic package similar to TO92 (10 A 3 DIN 41888). They are designed for use up to the VHF range.
N-channel DUAL GATE MOS FIELD EFFECT transistors
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level.
DESCRIPTIONGeneral purpose N-channel symmetrical junction field-effect transistors in a plastic TO-92 variant package.
FEATURES• Interchangeability of drain and source connections• Frequencies up to 700 MHz.
APPLICATIONS• LF, HF and DC amplifiers.
General DescriptionThese N-channel power field effect transistors are product using high cell density DMOS technology.