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Descriptions
Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package.

Features
   Built in fast recovery diode, Saturation voltage positive temperature coefficient, High reliability and thermal stability parameters, good agreement, RoHS product.

Applications
   General purpose inverter, Frequency converters, Uninterrupted Power Supply(UPS).

Descriptions
Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package.

Features
   Low gate charge,, Low saturation voltage ,Positive temperature coefficient, RoHS product.

Applications
   General purpose inverter, Frequency converters, Induction Heating(IH), Uninterrupted Power Supply(UPS).

Descriptions
Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package.

Features
   Low gate charge,, Low saturation voltage ,Positive temperature coefficient, RoHS product.

Applications
   General purpose inverter, Frequency converters, Induction Heating(IH), Uninterrupted Power Supply(UPS).

Descriptions
Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package.

Features
   Built in fast recovery diode, High reliability and thermal stability parameters, Low switching loss, Low saturation voltage.

Applications
   Eddy-current heating.

Descriptions
Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package.

Features
   Low gate charge,, Low saturation voltage ,Positive temperature coefficient, RoHS product.

Applications
   General purpose inverter, Frequency converters, Induction Heating(IH), Uninterrupted Power Supply(UPS).

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate

This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. It also provides fast switching charac teristics and results in efficient operation at high frequencies.

• Industry Standard TO–220 Package
• High Speed Eoff: 67 J/A typical at 125°C
• Low On–Voltage – 1.7 V typical at 10 A, 125°C
• Robust High Voltage Termination
• ESD Protection Gate–Emitter Zener Diodes

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate

This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. It also provides fast switching characteristics and results in efficient operation at high frequencies.

• Industry Standard TO–220 Package
• High Speed Eoff: 67 μJ/A typical at 125°C
• Low On–Voltage – 1.7 V typical at 8.0 A, 125°C
• Robust High Voltage Termination
• ESD Protection Gate–Emitter Zener Diodes

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate

This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. It also provides low on–voltage which results in efficient operation at high current.

• Industry Standard TO–220 Package
• High Speed Eoff: 63 μJ/A typical at 125°C
• Low On–Voltage – 1.7 V typical at 8.0 A, 125°C
• Robust High Voltage Termination
• ESD Protection Gate–Emitter Zener Diodes

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate

This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. It also provides low on–voltage which results in efficient operation at high current.

• Industry Standard TO–220 Package
• High Speed Eoff: 63 J/A typical at 125°C
• Low On–Voltage – 1.7 V typical at 10 A, 125°C
• Robust High Voltage Termination
• ESD Protection Gate–Emitter Zener Diodes

GENERAL DESCRIPTION
Protected N-channel logic-level insulated gate Bipolar power Transistor in a Plastic envelope, intended for automotive ignition applications. The device has built-in zener diodes providing active collector voltage clamping and ESD protection up to 2 kV.