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J111 View Datasheet(PDF) - Philips Electronics

Part Name
Description
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J111 Datasheet PDF : 6 Pages
1 2 3 4 5 6
Philips Semiconductors
N-channel silicon field-effect transistors
DYNAMIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Input capacitance
VDS = 0; VGS = 10 V; f = 1 MHz
Cis
VDS = VGS = 0; f = 1 MHz
Cis
Feedback capacitance
VDS = 0; VGS = 10 V; f = 1 MHz
Crs
Switching times
test conditions
VDD = 10 V; VGS = 0 to VGSoff
VGS off = 12 V; RL = 750 for J111
VGS off = 7 V; RL = 1550 for J112
VGS off = 5 V; RL = 3150 for J113
Rise time
tr
Turn-on time
ton
Fall time
tf
Turn-off time
toff
Product specification
J111; J112; J113
typ.
typ.
max.
typ.
6 pF
22 pF
28 pF
3 pF
typ.
6 ns
typ.
13 ns
typ.
15 ns
typ.
35 ns
ok, halfpage
VDD
10 nF
50
10 µF
50
1 µF
RL
DUT
SAMPLING
SCOPE
50
MBK289
VGS = 0 V
Vi
VGS off
10%
90%
90%
Vo
10%
toff
tf
ton
tr
MBK288
Fig.2 Switching times test circuit.
Fig.3 Input and output waveforms.
July 1993
4
 

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