STP12NK80Z View Datasheet(PDF) - STMicroelectronics
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Description
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STP12NK80Z
STMicroelectronics
STP12NK80Z Datasheet PDF : 22 Pages
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STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS
VDGR
VGS
Drain-source voltage (VGS = 0)
Drain-gate voltage (RGS = 20KΩ)
Gate-source voltage
ID
Drain current (continuous) at TC = 25°C
ID
IDM(2)
Drain current (continuous) at TC=100°C
Drain current (pulsed)
PTOT
Total dissipation at TC = 25°C
Derating factor
Vesd(G-S) G-S ESD (HBM C= 100pF, R= 1.5kΩ)
VISO
dv/dt(3)
Insulation withstand voltage (DC)
Peak diode recovery voltage slope
TJ
Operating junction temperature
Tstg
Storage temperature
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD ≤10.5 A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX
Value
D2PAK
TO-220
TO-247
TO-220FP
800
800
± 30
10.5
10.5(1)
6.6
6.6(1)
42
42(1)
190
40
1.52
0.32
4
--
2500
4.5
-55 to 150
Unit
V
V
V
A
A
A
W
W/°C
kV
V
V
°C
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-a Thermal resistance junction-ambient max
Value
TO-220/
D²PAK
TO-220FP
TO-247
Unit
0.66
3.1
62.5
0.66 °C/W
50 °C/W
Doc ID 9567 Rev 7
3/22
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