Q1NC60R View Datasheet(PDF) - STMicroelectronics
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Description
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Q1NC60R Datasheet PDF : 9 Pages
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STQ1NC60R
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
DYNAMIC
Symbol
Parameter
Test Conditions
Min. Typ. Max.
gfs (1) Forward Transconductance VDS = 15 V, ID = 0.3 A
0.87
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
108
18
2.5
SWITCHING ON
Symbol
Parameter
Test Conditions
Min. Typ. Max.
td(on)
Turn-on Delay Time
VDD = 300 V, ID = 0.5 A
7.2
tr
Rise Time
RG = 4.7Ω VGS = 10 V
8
(Resistive Load see, Figure 3)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 480V, ID = 1 A,
VGS = 10V, RG = 4.7Ω
7.3
10
3.4
2.5
SWITCHING OFF
Symbol
Parameter
Test Conditions
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 480V, ID = 1 A,
RG = 4.7Ω, VGS = 10V
(Inductive Load see, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 0.3 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 1 A, di/dt = 100A/µs
VDD = 25 V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Min.
Min.
Typ.
33
11
43
Typ.
450
720
3.2
Max.
Max.
0.3
1.2
1.6
Unit
S
pF
pF
pF
Unit
ns
ns
nC
nC
nC
Unit
ns
ns
ns
Unit
A
A
V
ns
µC
A
Safe Operating Area
Thermal Impedance
3/9
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