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STP11NK50Z View Datasheet(PDF) - STMicroelectronics

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STP11NK50Z Datasheet PDF : 16 Pages
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STB11NK50Z - STP11NK50ZFP - STP11NK50Z
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
td(on)
tr
Turn-on delay time
Rise time
td(off)
tf
Turn-off delay time
Fall time
tr(Voff)
tf
tc
Off-voltage rise time
Fall time
Cross-over time
Test conditions
VDD= 250 V, ID=5.5 A,
RG= 4.7 Ω, VGS=10 V
(see Figure 19)
VDD = 250 V, ID=5.5 A,
RG = 4.7 Ω, VGS=10 V
(see Figure 19)
VDD=400 V, ID=11.4 A,
RG=4.7 Ω, VGS=10 V
(see Figure 19)
Min. Typ. Max. Unit
14.5
ns
18
ns
41
ns
15
ns
11.5
ns
12
ns
27
ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
ISD Source-drain current
ISDM(1) Source-drain current (pulsed)
VSD(2) Forward on voltage
ISD=10 A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=10 A,
di/dt = 100 A/µs,
VDD=45 V, Tj=150 °C
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
10 A
40 A
1.6 V
308
ns
2.4
µC
16
A
Table 9. Gate-source Zener diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
BVGSO(1) Gate-source breakdown voltage Igs=±1mA (open drain) 30
V
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
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