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STP11NK50Z View Datasheet(PDF) - STMicroelectronics

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STP11NK50Z Datasheet PDF : 16 Pages
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Electrical characteristics
STB11NK50Z - STP11NK50ZFP - STP11NK50Z
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1 mA, VGS= 0
500
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating @125 °C
1 µA
50 µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20 V
±10 µA
VGS(th) Gate threshold voltage
VDS= VGS, ID = 100 µA
3 3.75 4.5 V
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 4.5 A
0.48 0.52
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1) Forward transconductance VDS =15 V, ID = 4.5 A
7.7
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25 V, f=1 MHz, VGS=0
1390
pF
173
pF
42
pF
Coss
(2)
eq .
Equivalent output
capacitance
VGS=0, VDS =0 to 400 V
110
pF
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD=400 V, ID = 11.4 A
VGS =10 V
(see Figure 18)
49 68 nC
10
nC
25
nC
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
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