STP11NK50Z View Datasheet(PDF) - STMicroelectronics

Part Name

Description

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STP11NK50Z

N-channel 500 V, 0.48 Ω , 10 A TO-220, TO-220FP, D2PAK Zener-protected SuperMESHTM Power MOSFET

STMicroelectronics 

STB11NK50Z - STP11NK50ZFP - STP11NK50Z

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

VDS

VGS

ID

ID

IDM(2)

PTOT

Drain-source voltage (VGS = 0)

Gate-source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC=100 °C

Drain current (pulsed)

Total dissipation at TC = 25 °C

Derating factor

VESD(G-S)

dv/dt(3)

Gate source ESD (HBM-C= 100 pF,

R= 1.5 kΩ)

Peak diode recovery voltage slope

VISO Insulation withstand voltage (DC)

TJ

Operating junction temperature

Tstg

Storage temperature

1. Limited only by maximum temperature allowed

2. Pulse width limited by safe operating area

3. ISD ≤ 10 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

Table 3. Thermal data

Symbol

Parameter

Rthj-case

Rthj-a

Tl

Thermal resistance junction-case max

Thermal resistance junction-ambient max

Maximum lead temperature for soldering

purpose

Table 4. Avalanche characteristics

Symbol

Parameter

IAS

Avalanche current, repetitive or not-

repetitive (pulse width limited by Tj max)

Single pulse avalanche energy

EAS

(starting TJ = 25 °C, ID=IAR, VDD = 50 V)

Value

TO-220

D²PAK

TO-220FP

500

± 30

10

6.3

40

125

1

10(1)

6.3(1)

40(1)

30

0.24

Unit

V

V

A

A

A

W

W/°C

4000

V

4.5

--

2500

V/ns

V

-55 to 150

°C

Value

TO-220

D²PAK

TO-220FP

1

4.2

62.5

Unit

°C/W

°C/W

300

°C

Value

Unit

10

A

190

mJ

3/16

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