Y100NS20FD View Datasheet(PDF) - STMicroelectronics

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Y100NS20FD

N-channel 200V - 0.022Ω - 100A - Max247 MESH OVERLAY™ Power MOSFET

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STY100NS20FD

(TCASE=25°C unless otherwise specified)

Table 4. On/off states

Symbol

Parameter

Test condictions

Min. Typ. Max. Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS = 0

200

V

IDSS

IGSS

Zero gate voltage drain

current (VGS = 0)

Gate body leakage current

(VDS = 0)

VDS = Max rating

VDS = Max rating, @125°C

VGS = ± 20V

10 µA

100 µA

±100 nA

VGS(th)

RDS(on)

Gate threshold voltage

Static drain-source on

resistance

VDS = VGS, ID = 250µA

VGS = 10V, ID = 50A

2

3

4

V

0.022 0.024 Ω

Table 5. Dynamic

Symbol

Parameter

Test condictions

Min. Typ. Max. Unit

gfs (1)

Forward transconductance

VDS > ID(on) x RDS(on)max,

ID = 50A

30

S

Ciss Input capacitance

7900

pF

Coss

Crss

Output capacitance

Reverse transfer

capacitance

VDS =25V, f=1 MHz, VGS=0

1500

460

pF

pF

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD = 100V, ID = 100A,

VGS = 10V

(see Figure 13)

360

nC

35

nC

135

nC

1. Pulsed: pulse duration=300µs, duty cycle 1.5%

4/12

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