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Y100NS20FD View Datasheet(PDF) - STMicroelectronics

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Y100NS20FD Datasheet PDF : 12 Pages
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STY100NS20FD
N-channel 200V - 0.022- 100A - Max247
MESH OVERLAY™ Power MOSFET
General features
Type
STY100NS20FD
VDSS
200V
RDS(on)
<0.024
ID
100A
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
± 20V gate to source voltage rating
Low intrinsic capacitance
Fast body-drain diode:low trr, Qrr
Description
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of Power MOSFETs with
outstanding performances. The new patented
STrip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(ON) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
Applications
Switching application
3
2
1
Max247
Internal schematic diagram
Order codes
Part number
STY100NS20FD
Marking
Y100NS20FD
Package
Max247
Packaging
Tube
May 2006
Rev 3
1/12
www.st.com
12
 

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