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Q1NE10L View Datasheet(PDF) - STMicroelectronics

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Q1NE10L Datasheet PDF : 13 Pages
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STQ1NE10L
Electrical characteristics
Table 5. Source drain diode
Symbol
Parameter
Test conditions
ISD Source-drain current
ISDM(1) Source-drain current (pulsed)
VSD(2) Forward on voltage
ISD=1A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 1A,
di/dt = 100A/µs,
VDD=30V, TJ = 100°C
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min. Typ. Max Unit
1
A
4
A
1.5 V
52
ns
90
nC
3.5
A
Obsolete Product(s) - Obsolete Product(s)
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