SI3430DV-T1 View Datasheet(PDF) - Vishay Semiconductors
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Description
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SI3430DV-T1 Datasheet PDF : 5 Pages
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Si3430DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.25
500
Capacitance
0.20
0.15
0.10
VGS = 6.0 V
VGS = 10 V
400
Ciss
300
200
0.05
0.00
0
2
4
6
8
ID - Drain Current (A)
Gate Charge
10
VDS = 50 V
ID = 2.4 A
8
6
4
2
0
0
1
2
3
4
5
6
Qg - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
10
100
Crss
Coss
0
0
10
20
30
40
50
60
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.2
2.0
VGS = 10 V
ID = 2.4 A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.4
TJ = 150_C
0.3
ID = 2.4 A
0.2
TJ = 25_C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Document Number: 71235
S-31725—Rev. B, 18-Aug-03
0.1
0.0
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
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