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SI3430DV-T1-E3 View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
View to exact match
SI3430DV-T1-E3
Vishay
Vishay Semiconductors Vishay
SI3430DV-T1-E3 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
www.vishay.com
Si3430DV
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
TSOP-6 Single
S
4
D
5
D
6
3
G
2
D
1
D
Top View
FEATURES
• High-efficiency PWM optimized
• 100 % Rg tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
(1, 2, 5, 6) D
Available
PRODUCT SUMMARY
VDS (V)
RDS(on) max. (Ω) at VGS = 10 V
RDS(on) max. (Ω) at VGS = 6 V
Qg typ. (nC)
ID (A)
Configuration
100
0.170
0.185
5.5
2.4
Single
(3) G
(4) S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
Lead (Pb)-free and halogen-free
TSOP-6
Si3430DV-T1-E3
Si3430DV-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
5s
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 175 °C) a
Pulsed drain current
Avalanche current
Repetitive avalanche energy (duty cycle 1 %)
Continuous source current (diode conduction) a
Maximum power dissipation a
Operating junction and storage temperature range
TA = 25 °C
TA = 85 °C
L = 0.1 mH
TA = 25 °C
TA = 85 °C
VDS
VGS
ID
IDM
IAR
EAR
IS
PD
TJ, Tstg
100
± 20
2.4
1.7
8
6
1.8
1.7
2
1
-55 to +150
STEADY STATE
100
± 20
1.8
1.3
8
6
1.8
1
1.14
0.59
-55 to +150
UNIT
V
A
mJ
A
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient a
Maximum junction-to-foot (drain)
Note
a. Surface mounted on 1" x 1" FR4 board
t5s
Steady state
Steady state
SYMBOL
RthJA
RthJF
TYPICAL
45
90
25
MAXIMUM
62.5
110
30
UNIT
°C/W
S19-0836-Rev. E, 30-Sep-2019
1
Document Number: 71235
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 

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