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G1003A View Datasheet(PDF) - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

Part Name
Description
View to exact match
G1003A Datasheet PDF : 6 Pages
1 2 3 4 5 6
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
G1003A SOT23-3L
IGSS
VGS(th)
RDS(ON)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS
VGS=±20V,VDS=0V
VDS=VGS,ID=250µA
VGS=10V, ID=5A -
VDS=5V,ID=2.9A
-
-
±30
uA
1
2
3
V
135 145
m
-
8
-
S
VDS=25V,VGS=0V,
F=1.0MHz
- 690
-
PF
- 120
-
PF
-
90
-
PF
-
11
-
nS
VDD=30V,ID=2A,RL=15
-
7.4
-
nS
VGS=10V,RG=2.5
-
35
-
nS
-
9.1
-
nS
VDS=30V,ID=3A,
VGS=10V
- 15.5
nC
-
3.2
-
nC
-
4.7
-
nC
VGS=0V,IS=6A
-
-
1.2
V
-
-
6
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
www.yfwdiode.com
2/6
Dongguan YFW Electronics Co, Ltd.
 

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