G1003A-SOT23-3L View Datasheet(PDF) - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

Part Name

Description

View to exact match

G1003A-SOT23-3L

The G1003A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge

DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 

G1003A SOT23-3L

■ Description

The G1003A uses advanced trench technology and

design to provide excellent RDS(ON) with low gate charge. It

can be used in a wide variety of applications.

It is ESD protected.

■ General Features

●

VDSS RDS(ON) ID

@ 10V (typ)

100V

135mΩ

5A

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Excellent package for good heat dissipation

■ Application

● Power switching application

● Hard switched and high frequency circuits

● Uninterruptible power supply

■ Marking

Marking

G1003A

D

S

G

■ Simplified outline(SOT23-3L)

D

G

S

■ Schematic diagram

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter

Symbol

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

Drain Current-Continuous

ID

Drain Current-Pulsed (Note 1)

IDM

Maximum Power Dissipation

PD

Operating Junction and Storage Temperature Range

TJ,TSTG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient (Note 2)

RθJA

Limit

100

±20

5

24

3

-55 To 150

41.7

Unit

V

V

A

A

W

℃

℃/W

Electrical Characteristics (TA=25℃unless otherwise noted)

Parameter

Symbol

Condition

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=250µA

Zero Gate Voltage Drain Current

IDSS

VDS=80V, VGS=0V

Min Typ Max Unit

100 105

-

V

-

-

800

nA

www.yfwdiode.com

1/6

Dongguan YFW Electronics Co, Ltd.

Share Link: