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STP10NM60N View Datasheet(PDF) - Inchange Semiconductor

Part Name
Description
MFG CO.
STP10NM60N
Iscsemi
Inchange Semiconductor Iscsemi
STP10NM60N Datasheet PDF : 2 Pages
1 2
Isc N-Channel MOSFET Transistor
STP10NM60N
·FEATURES
·With TO-220 package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600
V
VGSS
Gate-Source Voltage
±25
V
ID
Drain Current-Continuous@TC=25
TC=125
10
5
A
IDM
Drain Current-Single Pulsed
32
A
PD
Total Dissipation @TC=25
70
W
Tch
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX
UNIT
1.79
/W
isc websitewww.iscsemi.cn
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