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KHB3D0N70F View Datasheet(PDF) - VBsemi Electronics Co.,Ltd

Part Name
Description
View to exact match
KHB3D0N70F
VBSEMI
VBsemi Electronics Co.,Ltd VBSEMI
KHB3D0N70F Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
KHB3D0N70F
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum junction-to-ambient
Maximum junction-to-case (drain)
RthJA
RthJC
TYP.
43
3.1
MAX.
65
4.0
www.VBsemi.tw
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-source breakdown voltage
VDS temperature coefficient
Gate-source threshold voltage (N)
Gate-source leakage
Zero gate voltage drain current
Drain-source on-state resistance
Forward transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VGS = ± 30 V
VDS = 700 V, VGS = 0 V
VDS = 560 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 3 A
VDS = 30 V, ID = 3 A
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance, energy
related a
Effective output capacitance, time
related b
Ciss
Coss
Crss
Co(er)
Co(tr)
VGS = 0 V,
VDS = 100 V,
f = 1 MHz
VDS = 0 V to 560 V, VGS = 0 V
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate input resistance
Drain-Source Body Diode Characteristics
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Rg
VGS = 10 V
ID = 3 A, VDS = 520 V
VDD = 560 V, ID = 3 A,
VGS = 10 V, Rg = 9.1
f = 1 MHz, open drain
Continuous source-drain diode current
Pulsed diode forward current
IS
MOSFET symbol
showing the
D
integral reverse
G
ISM
p - n junction diode
S
MIN. TYP.
700
-
-
0.73
2
-
-
-
-
-
-
-
-
-
-
1.36
-
2
410 820
20
60
2
4
-
36
-
117
-
24
-
6
-
11
-
14
-
12
-
30
-
20
0.4
1.4
-
-
-
-
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VSD
trr
Qrr
IRRM
TJ = 25 °C, IS = 3 A, VGS = 0 V
TJ = 25 °C, IF = IS = 3 A,
dI/dt = 100 A/μs, VR = 25 V
-
0.83
118 237
-
2.2
-
16
Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS
b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS
MAX. UNIT
-
-
4
± 100
±1
1
10
-
-
V
V/°C
V
nA
μA
μA
S
-
-
-
pF
-
-
48
-
nC
-
28
24
ns
60
40
2.7
7
A
18
1.3
V
474 ns
-
μC
-
A
E-mail:China@VBsemi TEL:86-755-83251052
2
 

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