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LU110ATU View Datasheet(PDF) - VBsemi Electronics Co.,Ltd

Part Name
Description
View to exact match
LU110ATU
VBSEMI
VBsemi Electronics Co.,Ltd VBSEMI
LU110ATU Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
LU110ATU
VDS
Vary tp to obtain
required IAS
Rg
10 V
tp
L
D.U.T.
IAS
0.01 Ω
+
- V DD
Fig. 12a - Unclamped Inductive Test Circuit
www.VBsemi.tw
VDS
VDS
tp
VDD
IAS
Fig. 12b - Unclamped Inductive Waveforms
600
ID
Top 3.8 A
500
6.5 A
Bottom 9.2 A
400
300
200
100
VDD = 25 V
0
25
50
75
100 125 150 175
91018_12c
Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
10 V
QGS
VG
QG
QGD
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - VDS
VGS
3 mA
IG
ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
E-mail:China@VBsemi TEL:86-755-83251052
6
 

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