CEP07N65A View Datasheet(PDF) - Unspecified

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Description

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CEP07N65A

N-Channel MOSFET uses advanced trench technology

Unspecified 

Description：

This N-Channel MOSFET uses advanced trench technology and

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

CEP07N65A

Features：

1) VDS=650V,ID=7A,RDS(ON)<1.25Ω@VGS=10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra RDS(ON).

5) Excellent package for good heat dissipation.

GDS

Absolute Maximum Ratings：(TA=25℃ unless otherwise noted)

Symbol

VDS

VGS

ID

EAS

IAR

PD

TJ, TSTG

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current-

Continuous Drain Current-TC=100℃

Single Pulse Avalanche Energy1

2

Avalanche Current

Power Dissipation

Operating and Storage Junction Temperature Range

Ratings

650

±30

7

4.7

420

7

147

-55-+150

Thermal Characteristics：

Symbol

Parameter

Max

RƟJC

Thermal Resistance,Junction to Case

0.88

RƟJA Thermal Resistance,Junction to Ambient

62.5

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—1—

Units

V

V

A

mJ

A

W

℃

Units

℃/W

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