CEM8208 View Datasheet(PDF) - Unspecified

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Description

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CEM8208

Dual N-Channel MOSFET uses advanced trench technology

Unspecified 

Description：

This Dual N-Channel MOSFET uses advanced trench technology and

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Features：

1) VDS=20V,ID=6.5A,RDS(ON)<24mΩ@VGS=4.5V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra RDS(ON).

5) Excellent package for good heat dissipation.

CEM 8208

S1

G1

S2

G2

D1

D1

D2

D2

Absolute Maximum Ratings：(TC=25℃ unless otherwise noted)

Symbol

VDS

VGS

ID

EAS

PD

TJ, TSTG

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current-1a

Continuous Drain Current-TC=100℃

Pulsed Drain Current

Single Pulse Avalanche Energy

Power Dissipation1a

Operating and Storage Junction Temperature Range

Ratings

20

±10

6.5

---

20

---

1.6

-55 to +150

Thermal Characteristics：

Symbol

Parameter

Max

RƟJc

Maximum Junction-to-Lead1

40

RƟJA

Thermal Resistance,Junction to Ambient1a

78

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—1—

Units

V

V

A

mJ

W

℃

Units

℃/W

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