datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

1T413 View Datasheet(PDF) - Sony Semiconductor

Part Name
Description
View to exact match
1T413
Sony
Sony Semiconductor Sony
1T413 Datasheet PDF : 4 Pages
1 2 3 4
Variable Capacitance Diode
1T413
Description
The 1T413 is a variable capacitance diode
designed for the digital cellular phone VCO using a
super-small-miniature flat package (SSVC).
M-290
Features
Super-small-miniature flat package
Low series resistance: 0.40 Max. (f=470 MHz)
Large capacitance ratio: 2.90 Typ. (C1/C4)
Small leakage current: 10 nA Max. (VR=15 V)
Applications
Digital cellular phone VCO
Structure
Silicon epitaxial planar type diode
Absolute Maximum Ratings (Ta=25 °C)
Reverse voltage
VR
15
V
Operating temperature Topr –20 to +75 °C
Storage temperature Tstg –65 to +150 °C
Electrical Characteristics
Item
Reverse current
Diode capacitance
Capacitance ratio
Series resistance
Symbol
IR
C1
C4
C1/C4
rs
Conditions
VR=15 V
VR=1 V, f=1 MHz
VR=4 V, f=1 MHz
VR=1 V, f=470 MHz
(Ta=25 °C)
Min. Typ. Max. Unit
10.0 nA
15.0
17.5 pF
5.1
6.1
pF
2.5
2.9
0.40
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
—1—
E99220-TE
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]