STS7NF60L View Datasheet(PDF) - VBsemi Electronics Co.,Ltd
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STS7NF60L Datasheet PDF : 9 Pages
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STS7NF60L
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
0.08
TJ = 150 °C
0.07
10
0.06
0.05
www.VBsemi.tw
ID = 4.6 A
125 °C
TJ = 25 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
2.6
2.4
ID = 250 µA
2.2
2.0
1.8
1.6
1.4
1.2
1.0
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
10
0.04
0.03
0.02
0
25 °C
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
10
0
10-3
10-2
10-1
1
10
100 600
Time (s)
Single Pulse Power, Junction-to-Ambient
100 µs
1
1 ms
10 ms
0.1
TA = 25 °C
Single Pulse
0.01
BVDSS Limited
100 ms
1s
10 s
DC
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
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