STS7NF60L View Datasheet(PDF) - VBsemi Electronics Co.,Ltd
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Description
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STS7NF60L Datasheet PDF : 9 Pages
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STS7NF60L
N-Channel 60-V (D-S) MOSFET
www.VBsemi.tw
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
60
0.012 at VGS = 10 V
0.015 at VGS = 4.5 V
ID (A)d
12.6
11.6
Qg (Typ.)
10.5 nC
S1
S2
S3
G4
SO-8
Top View
8D
7D
6D
5D
D
G
S
N-Channel MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Optimized for “Low Side” Synchronous
Rectifier Operation
• 100 % Rg and UIS Tested
APPLICATIONS
• CCFL Inverter
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
IS
L = 0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
Limit
60
± 20
12.6a
11.8
8.1b, c
7.8b, c
25
4.2
2.1b, c
15
11.2
5
3.2
2.5b, c
1.6b, c
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
t ≤ 10 s
Steady State
Symbol
RthJA
RthJF
Typical
38
20
Maximum
50
25
Unit
V
A
mJ
W
°C
Unit
°C/W
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