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IRFL9014TRPBF View Datasheet(PDF) - VBsemi Electronics Co.,Ltd

Part Name
Description
View to exact match
IRFL9014TRPBF
VBSEMI
VBsemi Electronics Co.,Ltd VBSEMI
IRFL9014TRPBF Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
IRFL9014TRPBF
P-Channel 60-V (D-S) MOSFET
www.VBsemi.tw
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
- 60
0.055 at VGS = - 10 V
0.065 at VGS = - 4.5 V
ID (A)a
- 7.0
- 6.0
Qg (Typ.)
30 nC
FEATURES
• TrenchFET® Power MOSFET
• 100 % UIS Tested
APPLICATIONS
• Load Switch
SOT-223
D
S
D
G
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Avalanche Current Pulse
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
- 60
± 20
- 7.0a
- 5.2
- 4 .8b
- 4.1b
- 25
- 4.5
10.1
6.9a
3.5b
10.4a
6.6a
2.1b
1.1b
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb
Maximum Junction-to-Case
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
Steady State
Steady State
Symbol
RthJA
RthJC
Typical
33
0.98
Maximum
40
1.2
Unit
V
A
mJ
A
W
°C
Unit
°C/W
E-mail:China@VBsemi TEL:86-755-83251052
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