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BF1107 View Datasheet(PDF) - VBsemi Electronics Co.,Ltd

Part Name
Description
View to exact match
BF1107
VBSEMI
VBsemi Electronics Co.,Ltd VBSEMI
BF1107 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
BF1107
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1000
5
VGS = 0 V
4
www.VBsemi.tw
100
TJ = 125 °C
10
TJ = 25 °C
TJ = - 55 °C
1
0.0
0.3
0.6
0.9
1.2
1.5
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
3
ID = 200 mA
ID = 500 mA
2
1
0
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-Source Voltage
0.4
3
0.2
2.5
ID = 250 µA
0.0
2
- 0.2
1.5
- 0.4
- 0.6
1
TA = 25 °C
0.5
- 0.8
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
Threshold Voltage Variance Over Temperature
2
1
Duty Cycle = 0.5
0
0.01
0.1
1
10
100
600
Time (s)
Single Pulse Power, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 350 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
E-mail:China@VBsemi TEL:86-755-83251052
4
 

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