BF1107 View Datasheet(PDF) - VBsemi Electronics Co.,Ltd
Part Name
Description
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BF1107 Datasheet PDF : 8 Pages
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BF1107
N-Channel 60-V (D-S) MOSFET
www.VBsemi.tw
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
60
2.8 at VGS = 10 V
ID (mA)
250
SOT-23
G1
3D
S2
Top View
D
G
S
N-Channel MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Low Threshold: 2 V (typ.)
• Low Input Capacitance: 25 pF
• Fast Switching Speed: 25 ns
• Low Input and Output Leakage
• TrenchFET® Power MOSFET
• 1200V ESD Protection
• Compliant to RoHS Directive 2002/95/EC
BENEFITS
• Low Offset Voltage
• Low-Voltage Operation
• Easily Driven Without Buffer
• High-Speed Circuits
• Low Error Voltage
APPLICATIONS
• Direct Logic-Level Interface: TTL/CMOS
• Drivers: Relays, Solenoids, Lamps, Hammers, Display,
Memories, Transistors, etc.
• Battery Operated Systems
• Solid-State Relays
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)b
Pulsed Drain Currenta
Power Dissipationb
Maximum Junction-to-Ambientb
Operating Junction and Storage Temperature Range
TA = 25 °C
TA = 100 °C
TA = 25 °C
TA = 100 °C
VDS
VGS
ID
IDM
PD
RthJA
TJ, Tstg
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 board.
Limit
60
± 20
250
150
800
0.30
0.13
350
- 55 to 150
Unit
V
mA
W
°C/W
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply.
E-mail：China@VBsemi TEL:86-755-83251052
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