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BYC8B-600 View Datasheet(PDF) - WeEn Semiconductors

Part Name
Description
View to exact match
BYC8B-600
WEEN
WeEn Semiconductors WEEN
BYC8B-600 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
WeEn Semiconductors
Rectifier diode
ultrafast, low switching loss
Product specification
BYC8B-600
Forward dissipation, PF (W)
25
Vo = 1.4 V
Rs = 0.05625 Ohms
20
15
0.2
0.1
BYC8-600
Tmb(max) C
D = 1.0 95
106
0.5
117
10
I
tp
D
=
tp
T
128
5
139
T
t
0
150
0
2
4
6
8
10
12
Average forward current, IF(AV) (A)
Fig.3. Maximum forward dissipation as a function of
average forward current; rectangular current
waveform where IF(AV) =IF(RMS) x D.
Diode reverse recovery switching losses, Pdsw (W)
0.25
f = 20 kHz
Tj = 125 C
0.2 VR = 400 V
0.15
12 A
16 A
0.1
IF = 8 A
0.05
BYC8-600
0
100 Rate of change of current, dIF/dt (A/us)
1000
Fig.4. Typical reverse recovery switching losses in
diode, as a function of rate of change of current dIF/dt.
Transistor losses due to diode reverse recovery, Ptsw (W)
8
f = 20 kHz
7
16 A
6
Tj = 125 C
VR = 400 V
12 A
5
4
8A
3
IF = 5 A
2
1
BYC8-600
0
100
Rate of change of current, dIF/dt (A/us)
1000
Fig.5. Typical switching losses in transistor due to
reverse recovery of diode, as a function of of change
of current dIF/dt.
ID
dIF/dt
VD
Irrm
ID = IL
losses due to
diode reverse recovery
time
Fig.6. Origin of switching losses in transistor due to
diode reverse recovery.
100 Reverse recovery time, trr (ns)
16 A
12 A
8A
IF = 5 A
BYC8-600
Tj = 125 C
VR = 400 V
10
100
Rate of change of current, dIF/dt (A/us)
1000
Fig.7. Typical reverse recovery time trr, as a function
of rate of change of current dIF/dt.
100 Peak reverse recovery current, Irrm (A)
BYC8-600
10
16 A
IF = 5 A
Tj = 125 C
VR = 400 V
1
100 Rate of change of current, dIF/dt (A/us)
1000
Fig.8. Typical peak reverse recovery current, Irrm as a
function of rate of change of current dIF/dt.
March 2001
3
Rev 1.500
 

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