datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

1N60 View Datasheet(PDF) - Inchange Semiconductor

Part Name
Description
View to exact match
1N60
Iscsemi
Inchange Semiconductor Iscsemi
1N60 Datasheet PDF : 2 Pages
1 2
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
1N60
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
VDS= VGS; ID= 0.25mA
VGS= 10V; ID= 0.5A
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 600V; VGS= 0
VSD
Forward On-Voltage
IS= 1A; VGS= 0
MIN MAX UNIT
600
V
2
4
V
8
Ω
±100
nA
1
μA
1.8
V
·
isc websitewww.iscsemi.cn
2
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]