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1N60 View Datasheet(PDF) - Inchange Semiconductor

Part Name
Description
View to exact match
1N60
Iscsemi
Inchange Semiconductor Iscsemi
1N60 Datasheet PDF : 2 Pages
1 2
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
1N60
·FEATURES
·Drain Current –ID= 1A@ TC=25
·Drain Source Voltage-
: VDSS= 600V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 8Ω(Max)
·Avalanche Energy Specified
·Fast Switching
·Simple Drive Requirements
·DESCRITION
·Designed for high efficiency switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VDSS
VGS
ID
IDM
PD
Tj
Tstg
Drain-Source Voltage
Gate-Source Voltage-Continuous
Drain Current-Continuous
Drain Current-Single Plused
Total Dissipation @TC=25
Max. Operating Junction Temperature
Storage Temperature
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
VALUE
600
±20
1
4
28
150
-55~150
UNIT
V
V
A
A
W
MAX
4.5
110
UNIT
/W
/W
isc websitewww.iscsemi.cn
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