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K1021 View Datasheet(PDF) - Inchange Semiconductor

Part Name
Description
View to exact match
K1021
Iscsemi
Inchange Semiconductor Iscsemi
K1021 Datasheet PDF : 2 Pages
1 2
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1021
·ELECTRICAL CHARACTERISTICS (TC=25)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=1.5A
IGSS
Gate Source Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=800V; VGS= 0
VSD
Forward On-Voltage
IS=3A; VGS=0
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=10V;ID=3A;
RL=25Ω
toff
Turn-off time
MIN TYP. MAX UNIT
800
V
2.5
3.5
5.0
V
4.2
6.0
Ω
±100 nA
500 uA
0.93 1.40
V
60
90
ns
85
128
ns
60
90
ns
160 240 ns
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