STP13NK60Z(2005) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

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STP13NK60Z
(Rev.:2005)

N-CHANNEL 600V - 0.48Ω - 13A - TO-220/FP - D²/I²PAK - TO-247 Zener-Protected SuperMESH™ MOSFET

STMicroelectronics 

STB13NK60Z - STB13NK60Z-1 - STP13NK60Z/FP - STW13NK60Z 2 Electrical characteristics

2 Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4. On/off states

Symbol

Parameter

V(BR)DSS

Drain-Source Breakdown

Voltage

IDSS

Zero Gate Voltage Drain

Current (VGS = 0)

IGSS

VGS(th)

RDS(on)

Gate Body Leakage Current

(VDS = 0)

Gate Threshold Voltage

Static Drain-Source On

Resistance

Test Conditions

ID = 1 mA, VGS= 0

VDS = Max Rating,

VDS = Max Rating,Tc=125°C

VGS = ±20 V

VDS= VGS, ID = 100 µA

VGS= 10 V, ID= 4.5 A

Min.

600

3

Typ.

3.75

0.48

Max.

1

50

±10

4.5

0.55

Unit

V

µA

µA

µA

V

Ω

Table 5. Dynamic

Symbol

Parameter

Test Conditions

gfs Note 4

Ciss

Coss

Crss

Coss eq.

Note 5

Qg

Qgs

Qgd

Forward Transconductance VDS =8V, ID = 5 A

Input Capacitance

Output Capacitance

VDS =25V, f=1 MHz, VGS=0

Reverse Transfer Capacitance

Equivalent Ouput Capacitance VGS=0, VDS =0V to 480V

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD=480V, ID = 10A

VGS =10V

(see Figure 19)

Min. Typ. Max. Unit

11

S

2030

pF

210

pF

48

pF

125

pF

66

92

nC

11

nC

33

nC

Table 6. Switching times

Symbol

Parameter

td(on)

tr

Turn-on Delay Time

Rise Time

td(off)

tf

tr(Voff)

tf

tc

Turn-off Delay Time

Fall Time

Off-voltage Rise Time

Fall Time

Cross-over Time

Test Conditions

VDD=300 V, ID= 5A,

RG=4.7Ω, VGS=10V

(see Figure 20)

VDD=300 V, ID= 5A,

RG=4.7Ω, VGS=10V

(see Figure 20)

VDD=480 V, ID= 10A,

RG=4.7Ω, VGS=10V

(see Figure 20)

Min. Typ. Max. Unit

22

ns

14

ns

61

ns

12

ns

10

ns

9

ns

20

ns

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