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Z00607DA View Datasheet(PDF) - Kersemi Electronic Co., Ltd.

Part Name
Description
View to exact match
Z00607DA
KERSEMI
Kersemi Electronic Co., Ltd. KERSEMI
Z00607DA Datasheet PDF : 4 Pages
1 2 3 4
Z00607DA / Z00607MA
Fig 3: RMS on-state current versus ambient tem- Fig 4: Relative variation of thermal impedance
perature.
junction to ambient versus pulse duration.
IT(RMS)(A)
1.0
0.9
0.8
Rth(j-a)=Rth(j-l)
α=180°
0.7
0.6
0.5
0.4
Rth(j-a)=150°C/W
0.3
0.2
0.1
Tamb(°C)
0.0
0 10 20 30 40 50 60 70 80 90 100 110
K=[Zth(j-a)/Rth(j-a)]
1.00
0.10
0.01
1E-3
1E-2
1E-1
tp(s)
1E+0
1E+1
1E+2 5E+2
Fig 5: Relative variation of gate trigger current and
holding current versus junction temperature (typi-
cal values).
Fig 6: Non repetitive surge peak on-state current
versus number of cycles.
IGT,IH[Tj] / IGT,IH[Tj=25°C]
2.5
2.0
IGT
1.5
IH
1.0
0.5
Tj(°C)
0.0
-40 -20 0 20 40 60 80 100 120
ITSM(A)
9
8
7
6
5
4
3
2
1
0
1
Tj initial=25°C
F=50Hz
Number of cycles
10
100
1000
Fig 7: Non repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms, and cor-
responding value of I2t.
ITSM(A),I²t(A²s)
50.0
ITSM
10.0
Tj initial=25°C
1.0
0.1
1
I²t
tp(ms)
2
5
10
Fig 8: On-state characteristics (maximum values).
ITM(A)
10.0
Tj max.:
Vto= 0.95 V
Rd= 420 m
1.0
Tj=Tj max.
Tj=25°C
VTM(V)
0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
3/4
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