Z00607
Preliminary
TRIAC
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Repetitive Peak Off-State Voltage
VDRM
600
V
RMS On-State Current (Full Sine Wave) TMB=50°C
IT(RMS)
0.8
A
Non Repetitive Surge Peak F=50Hz t=20ms
9
On-State Current (Full Cycle,
TJ initial=25°C)
F=60Hz t=16.7ms
ITSM
I2t Value for Fusing
tP=10ms
I2t
Critical Rate of Rise of
A
9.5
0.45
A2s
On-State Current IG=2×IGT, F=120Hz TJ=110°C
dl/dt
20
A/µs
tr≤100ns
Peak Gate Current
tP=20µs TJ=110°C
IGM
1
A
Average Gate Power Dissipation
TJ=110°C
PG(AV)
0.1
W
Operating Junction Temperature Range
TJ
-40~+110
°C
Storage Junction Temperature Range
TSTG
-40~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Lead (AC)
Junction to Ambient
SYMBOL
θJLEAD
θJA
RATINGS
60
150
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Gate Trigger Current (Note 1)
I-II-III
IGT
VD=12V, RL=30Ω
IV
5
mA
7
Gate Trigger Voltage
VGT
ALL
1.3 V
Gate Non-Trigger Voltage
VGD
VD=VDRM, RL=3.3KΩ, ALL
TJ=110°C
0.2
V
Holding Current (Note 2)
IH
IT=200mA
5 mA
Latching Current
IL
IG=1.2IGT
I-III-IV
II
10 mA
20
Critical Rate of Rise of Off-State
dV/dt
VD=67%VDRM, Gate Open,
10
Voltage (Note 2)
TJ=110°C
V/µs
Critical Rate of Rise of Off-State
Voltage at Commutation (Note 2)
(dV/dt)c (dV/dt)c=0.35A/ms, TJ=110°C
1.5
V/µs
Peak On-State Voltage (Note 2)
VTM
ITM=1.1A, tp=380μs
TJ=25°C
1.5 V
Threshold Voltage (Note 2)
VTO
TJ=110°C
0.95 V
Dynamic Resistance (Note 2)
RD
TJ=110°C
420 mΩ
Repetitive Peak Off-State Current
IDRM
IRRM
VDRM=VRRM=600V
TJ=25°C
TJ=110°C
5 μA
0.1 mA
Notes: 1. Minimum IGT is guaranteed at 5% of IGT max.
2. For both polarities of MT2 referenced to MT1.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R401-025.a