SDT100GK08 View Datasheet(PDF) - Sirectifier Electronics
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Description
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SDT100GK08 Datasheet PDF : 4 Pages
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STD/SDT100
Thyristor-Diode Modules, Diode-Thyristor Modules
Fig. 1 Surge overload current
ITSM, IFSM: Crest value, t: duration
Fig. 2 i2dt versus time (1-10 ms)
Fig. 2a Maximum forward current
at case temperature
10
V
VG
1: IGT, TVJ = 125oC
2: IGT, TVJ = 25oC
3: IGT, TVJ = -40oC
Fig. 3 Power dissipation versus on-state current and ambient temperature
(per thyristor or diode)
3
1
2
56
1
4
IGD, TVJ = 125oC
0.1
100
101
102
4: PGAV = 0.5 W
5: PGM = 5 W
6: PGM = 10 W
103 mA 104
IG
Fig. 4 Gate trigger characteristics
1000
TVJ = 25oC
s
tgd
100
typ.
Limit
10
3 x STD/SDT100
Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current
and ambient temperature
3 x STD/SDT100
1
10
100
IG
Fig. 6 Gate trigger delay time
mA 1000
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