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2SC2624 View Datasheet(PDF) - New Jersey Semiconductor

Part Name
Description
View to exact match
2SC2624
NJSEMI
New Jersey Semiconductor NJSEMI
2SC2624 Datasheet PDF : 2 Pages
1 2
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc= 10mA; IB= 0
VcEO(SUS) Collector-Emitter Sustaining Voltage lc=1A; IB=0
V(BR)CBO Collector-Base Breakdown Voltage
|c=1mA; !E=O
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 0.1mA; lc= 0
VcE(sat)
Collector-Emitter Saturation Voltage
lc= 2A; IB= 0.4A
VeE(sat) Base-Emitter Saturation Voltage
lc= 2A; IB= 0.4A
ICBO
Collector Cutoff Current
VCB- 450V ; IE=0
IEBO
Emitter Cutoff Current
VEB= 7V; lc=0
hFE
DC Current Gain
lc= 5A; VCE= 5V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
lc=4A, IB1= -lB2= 0.8A
RL= 20O ;Pw=20u S
Duty Cycle =S2%
2SC2624
MIN TYP. MAX UNIT
400
V
400
V
450
V
7
V
1.2
V
1.5
V
1.0 mA
0.1 mA
10
1.0 u S
2.0 M s
1.0 M s
 

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