BD539, BD539A, BD539B, BD539C, BD539D
NPN SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
SAS631AI
10
1·0
0·1
0·01
1·0
BD539
BD539A
BD539B
BD539C
BD539D
10
100
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
1000
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS631AC
50
40
30
20
10
0
0
25
50
75
100 125 150
TC - Case Temperature - °C
Figure 5.
PRODUCT INFORMATION
4