2SC4591 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

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2SC4591

Silicon NPN RF Transistor

Inchange Semiconductor 

isc Silicon NPN RF Transistor

INCHANGE Semiconductor

2SC4591

DESCRIPTION

·High Current-Gain Bandwidth Product

fT= 9.0GHz TYP. @VCE = 5 V, IC = 20 mA

·Low Noise

NF = 1.2 dB TYP. @VCE = 5 V, IC = 5 mA, f = 900 MHz

·High Power Gain

PG = 12.5 dB TYP. @VCE = 5 V, IC = 20 mA, f = 900 MHz

·100% avalanche tested

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·Designed for VHF, UHF low noise amplifier.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

15

V

VCEO Collector-Emitter Voltage

9

V

VEBO

Emitter-Base Voltage

1.5

V

IC

Collector Current-Continuous

PC

Collector Power Dissipation

@TC=25℃

TJ

Junction Temperature

50

mA

0.15

W

150

℃

Tstg

Storage Temperature Range

-55~150

℃

isc website：www.iscsemi.cn

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