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1N5711W View Datasheet(PDF) - Diode Semiconductor Korea

Part Name
Description
View to exact match
1N5711W
DSK
Diode Semiconductor Korea DSK
1N5711W Datasheet PDF : 3 Pages
1 2 3
Diode Semiconductor Korea
Surface mount schottky barrier diode
1N5711W
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Characteristic
Symbol Min
Reverse Breakdown Voltage V(BR)R
70
Forward Voltage
VFM
-
Max Unit
-
V
0.41 V
1.00
Test Condition
IR=10μA
IF=1.0mA
IF=15mA
Reverse Current
IR
Capacitance between
Cj
terminals
Reverse Recovery Time
trr
-
200 nA
-
2.0
pF
-
1.0
ns
VR=50V
VR=0V,f=1.0MHz
IF=IR=5.0mA,
Irr=0.1×IR,RL=100
PACKAGE OUTLINE
Plastic surface mounted package
SOD-123
D
J
K
B
C
A
H
E
SOD-123
Dim
Min
Max
A
1.4
1.8
B
2.55
2.85
C
1.15 Typical
D
0.5
0.6
E
0.3
0.4
H
0.02
0.10
J
0.1 Typical
K
3.55
3.85
All Dimensions in mm
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