K1010 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
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K1010 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1010
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 3A
IGSS
Gate Source Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 500V; VGS= 0
VSD
Forward On-Voltage
IS=6A; VGS=0
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=10V;ID=6A;
RL=25Ω
toff
Turn-off time
MIN TYP. MAX UNIT
500
V
2.5
3.5
5.0
V
1.2
1.6
Ω
±100 nA
500 uA
1.0 1.5
V
50
80
ns
70
110
ns
50
80
ns
130 200 ns
isc website：www.iscsemi.cn
2 isc & iscsemi is registered trademark
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