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STPS1150M View Datasheet(PDF) - STMicroelectronics

Part Name
Description
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STPS1150M
ST-Microelectronics
STMicroelectronics ST-Microelectronics
STPS1150M Datasheet PDF : 12 Pages
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STPS1150
Characteristics
Figure 13. Reverse leakage current versus
reverse voltage applied (typical values)
IR(µA)
1.E+04
1.E+03
1.E+02
1.E+01
1.E+00
1.E-01
1.E-02
1.E-03
0
Tj=150°C
Tj=125°C
Tj=100°C
Tj=75°C
Tj=50°C
Tj=25°C
VR(V)
25
50
75
100
125
150
Figure 14. Junction capacitance versus reverse
voltage applied (typical values)
C(pF)
100
F=1MHz
VOSC=30mVRMS
Tj=25°C
10
VR(V)
1
1
10
100
1000
Figure 15. Forward voltage drop versus forward
current (all packages)
IFM(A)
3.0
2.5
Tj=125°C
(maximum values)
2.0
1.5
Tj=125°C
(typical values)
1.0
Tj=25°C
(maximum values)
0.5
VFM(V)
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Figure 16. Thermal resistance junction to
ambient versus copper surface under tab
(STmite)
250 Rth(j-a)(°C/W)
225
STmite
200
175
Epoxy printed circuit board,
150
copper thickness = 35 µm
125
100
75
50
25
0
SCu(cm²)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Figure 17. Thermal resistance junction to
ambient versus copper surface under tab
(STmite flat)
250 Rth(j-a)(°C/W)
225
STmite flat
200
175
Epoxy printed circuit board,
150
copper thickness = 35 µm
125
100
75
50
25
0
SCu(cm²)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Figure 18. Thermal resistance junction to
ambient versus copper surface under each lead
(SMA)
Rth(j-a)(°C/W)
130
120
Epoxy printed circuit board,
110
copper thickness = 35 µm
100
90
80
70
60
50
40
30
20
10
SCu(cm²)
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
DocID9472 Rev 6
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