STPS1150M View Datasheet(PDF) - STMicroelectronics
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STPS1150M Datasheet PDF : 12 Pages
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STPS1150
Characteristics
Figure 1. Average forward power
dissipation versus average
forward current
PF(AV)(W)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0
0.2
δ = 0.05
δ = 0.1 δ = 0.2 δ = 0.5
δ=1
IF(AV)(A)
0.4
0.6
0.8
T
δ=tp/T
1.0
tp
1.2
Figure 2. Average forward current versus
ambient temperature (δ = 0.5)
1.2 IF(AV)(A)
1.0
Rth(j-a) = Rth(j-l)
0.8
Rth(j-a) = 120 °C/W
0.6
0.4
T
0.2
0.0
0
δ = tp / T
25
tp
50
75
100
125
150
175
Figure 3. Normalized avalanche power derating Figure 4. Normalized avalanche power derating
versus pulse duration
versus junction temperature
PARM(tp)
PARM(1 µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
PARM(Tj)
PARM(25 °C)
1.2
1
0.8
0.6
0.4
0.2
0
100
1000
25
50
Tj(°C)
75
100
125
150
Figure 5. Non repetitive surge peak
forward current versus overload duration -
maximum values
20 IM(A)
18
STmite
16
14
12
Tc = 25 °C
10
8
Tc = 75 °C
6
4
IM
2
0
1.E-03
t
δ = 0.5
1.E-02
Tc = 125 °C
1.E-01
t(s)
1.E+00
Figure 6. Non repetitive surge peak
forward current versus overload duration -
maximum values
20 IM(A)
18
16
14
12
10
8
6
4
IM
2
0
1.E-03
t
δ = 0.5
1.E-02
STmite flat
Tc = 25 °C
Tc = 75 °C
Tc = 125 °C
1.E-01
t(s)
1.E+00
DocID9472 Rev 6
3/11
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