STB4NK60Z_08 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

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STB4NK60Z_08

N-channel 600 V - 1.76 Ω - 4 A SuperMESH™ Power MOSFET DPAK - D2PAK - IPAK - I2PAK - TO-220 - TO-220FP

STMicroelectronics 

STB4NK60Zx, STD4NK60Zx, STP4NK60Z, STP4NK60ZFP

Electrical characteristics

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

ISD Source-drain current

ISDM(1) Source-drain current (pulsed)

VSD(2) Forward on voltage

ISD = 4 A, VGS = 0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 4 A, di/dt = 100 A/µs

VDD = 24 V, Tj = 150 °C

(see Figure 19)

1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

2. Pulse width limited by safe operating area

4

A

16 A

1.6 V

400

ns

1700

nC

8.5

A

Table 8. Gate-source Zener diode

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

BVGSO (1) Gate-source breakdown voltage Igs=± 1 mA (open drain) 30

V

1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s

ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be

applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and

cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the

usage of external components.

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