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Part Name
Description
ZDT717 View Datasheet(PDF) - Zetex => Diodes
Part Name
Description
View to exact match
ZDT717
SM-8 DUAL PNP MEDIUM POWER HIGH GAIN TRANSISTORS
Zetex => Diodes
ZDT717 Datasheet PDF : 3 Pages
1
2
3
ZDT717
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
V
(BR)CBO
Breakdown Voltage
-12 -35
V
I
C
=-100
µ
A
Collector-Emitter
V
(BR)CEO
Breakdown Voltage
-12 -25
V
I
C
=-10mA*
Emitter-Base
V
(BR)EBO
Breakdown Voltage
-5
-8.5
V
I
E
=-100
µ
A
Collector Cutoff
I
CBO
Current
-100 nA V
CB
=-10V
Emitter Cutoff
I
EBO
Current
-100 nA V
EB
=-4V
Collector Emitter
I
CES
Cutoff Current
-100 nA V
CES
=-10V
Collector-Emitter
V
CE(sat)
Saturation Voltage
Base-Emitter
V
BE(sat)
Saturation Voltage
-10 -17 mV
-100 -140 mV
-110 -170 mV
-180 -220 mV
-0.9 -1.0 V
I
C
=-0.1A, I
B
=-10mA*
I
C
=-1A, I
B
=-10mA*
I
C
=-1.5A, I
B
=-50mA*
I
C
=-2.5A, I
B
=-50mA*
I
C
=-2.5A, I
B
=-50mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-0.8 -1.0 V
I
C
=-2.5A, V
CE
=-2V*
Static Forward
h
FE
Current Transfer
Ratio
Transition
f
T
Frequency
300 475
300 450
180 275
60 100
45 70
80 110
MHz
I
C
=-10mA, V
CE
=-2V*
I
C
=-100mA, V
CE
=-2V*
I
C
=-2.5A, V
CE
=-2V*
I
C
=-8A, V
CE
=-2V*
I
C
=-10A, V
CE
=-2V*
I
C
=-50mA, V
CE
=-10V
f=100MHz
Output Capacitance
Turn-On Time
Turn-Off Time
C
obo
t
on
t
off
21
30
pF
V
CB
=-10V, f=1MHz
70
ns
V
CC
=-6V, I
C
=-2A
130
ns
I
B1
=I
B2
=50mA
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
3 - 349
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