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STW57N65M5_12 View Datasheet(PDF) - STMicroelectronics

Part NameDescriptionManufacturer
STW57N65M5_12 N-channel 650 V, 0.056 Ω typ., 42 A MDmesh™ V Power MOSFET in I²PAK, TO-220, TO-220FP and D²PAK packages ST-Microelectronics
STMicroelectronics ST-Microelectronics
STW57N65M5_12 Datasheet PDF : 22 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Electrical characteristics
STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5
Figure 14. Source-drain diode forward
characteristics
Figure 15. Normalized BVDSS vs temperature
VSD
(V)
TJ=-50°C
1.2
1.0
AM05461v1
VDS
(norm)
1.08
1.06
1.04
ID = 1mA
AM10399v1
0.8
0.6
TJ=150°C
0.4
0.2
TJ=25°C
0
0 10 20 30 40 50 ISD(A)
1.02
1.00
0.98
0.96
0.94
0.92
-50 -25 0
25 50 75 100 TJ(°C)
Figure 16. Switching losses vs gate resistance
(1)
E (μJ)
800
VDD=400V
VGS=10V
ID=28A
Eon
AM14712v1
600
Eoff
400
200
0
0
10
20
30
40
1. Eon including reverse recovery of a SiC diode
RG(Ω)
8/22
Doc ID 022849 Rev 4
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